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MITSUBISHI HVIGBT MODULES
CM600HG-90H
HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE
CM600HG-90H
IC .................................................................. 600 A VCES ...................................................... 4500 V High Insulated Type 1-element in a Pack AISiC Baseplate
APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
130 0.5 57 0.25 57 0.25 4-M8 NUTS
Dimensions in mm
(4) C C
(2) C
4 2
17 0.1
124 0.25
G E
3 1
E
CIRCUIT DIAGRAM
>PET+PBT<
G
C
3-M4 NUTS
28.5 0.5 42.5 0.5 30.7 0.5 61.2 0.5 16.5 0.3
6-7 MOUNTING HOLES
41 0.5 22 0.3
18 0.3
screwing depth min. 7.7
screwing depth min. 16.5
40.4 0.5
+1.0 0
5 0.15
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
38
48
+1.0 0
LABEL
9 0.1
E (3)
E (1)
>PET+PBT<
140 0.5
44 0.3
May 2009 1
MITSUBISHI HVIGBT MODULES
CM600HG-90H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
MAXIMUM RATINGS
Symbol VCES VGES IC ICM IE IEM Pc Viso Ve Tj Top Tstg tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current (Note 2) Conditions VGE = 0V, Tj = 25C VCE = 0V, Tj = 25C DC, Tc = 100C Pulse DC Pulse Tc = 25C, IGBT part RMS, sinusoidal, f = 60Hz, t = 1 min. RMS, sinusoidal, f = 60Hz, QPD 10 pC Ratings 4500 20 600 1200 600 1200 7500 10200 5100 -40 ~ +150 -40 ~ +125 -40 ~ +125 10 Unit V V A A A A W V V C C C s
(Note 1)
(Note 1) Maximum power dissipation (Note 3) Isolation voltage Partial discharge extinction voltage Junction temperature Operating temperature Storage temperature Maximum short circuit pulse width VCC = 3200V, VCE VCES, VGE = 15V, Tj = 125C
ELECTRICAL CHARACTERISTICS
Symbol ICES VGE(th) IGES Cies Coes Cres Qg VCE(sat) td(on) tr Eon(10%) td(off) tf Eoff(10%) VEC trr Qrr Erec(10%) Item Collector cutoff current Gate-emitter threshold voltage Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Collector-emitter saturation voltage Turn-on delay time Turn-on rise time Turn-on switching energy (Note 5) Turn-off delay time Turn-off fall time Turn-off switching energy (Note 5) Emitter-collector voltage (Note 2) Reverse recovery time (Note 2) Reverse recovery charge (Note 2) Reverse recovery energy (Note 2), (Note 5) VCE = VCES, VGE = 0V VCE = 10 V, IC = 60 mA, Tj = 25C VGE = VGES, VCE = 0V, Tj = 25C VCE = 10 V, VGE = 0 V, f = 100 kHz, Tj = 25C VCC = 2250 V, IC = 600 A, VGE = 15 V, Tj = 25C IC = 600 A (Note 4) Tj = 25C VGE = 15 V Tj = 125C VCC = 2250 V, IC = 600 A, VGE = 15 V RG = 15 , Tj = 125C, Ls = 120 nH Inductive load VCC = 2250 V, IC = 600 A, VGE = 15 V RG = 15 , Tj = 125C, Ls = 120 nH Inductive load IE = 600 A VGE = 0 V (Note 4) Tj = 25C Tj = 125C Conditions Tj = 25C Tj = 125C Min -- -- 5.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- VCC = 2250 V, IE = 600 A, VGE = 15 V RG = 15 , Tj = 125C, Ls = 120 nH Inductive load -- -- Limits Typ -- 8 6.0 -- 108 8 2.4 10 3.45 3.70 -- -- 2.80 -- -- 1.70 4.80 4.15 -- 610 0.67 Max 3.5 35 7.0 0.5 -- -- -- -- -- -- 2.40 1.20 -- 6.00 1.20 -- -- -- 1.80 -- -- Unit mA V A nF nF nF C V s s J/P s s J/P V s C J/P
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
May 2009 2
MITSUBISHI HVIGBT MODULES
CM600HG-90H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
THERMAL CHARACTERISTICS
Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Item Thermal resistance Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, grease = 1W/m*K, D(c-f) = 100 m Min -- -- -- Limits Typ -- -- 9.0 Max 16.5 33.0 -- Unit K/kW K/kW K/kW
MECHANICAL CHARACTERISTICS
Symbol Mt Ms Mt m CTI da ds LP CE RCC'+EE' Item Conditions M8: Main terminals screw M6: Mounting screw M4: Auxiliary terminals screw Min 7.0 3.0 1.0 -- 600 26 56 -- -- Limits Typ -- -- -- 1.00 -- -- -- 27 0.19 Max 15.0 6.0 3.0 -- -- -- -- -- -- Unit N*m N*m N*m kg -- mm mm nH m
Mounting torque Mass Comparative tracking index Clearance Creepage distance Internal inductance Internal lead resistance
Tc = 25C
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125C). 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 3. Junction temperature (Tj) should not exceed Tjmax rating (150C). 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt.
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
May 2009 3
MITSUBISHI HVIGBT MODULES
CM600HG-90H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL) 1200 Tj = 125C 1000 VGE = 20V VGE = 15V 800 VGE = 12V 600 VGE = 10V VGE = 8V 400 1000 1200 VCE = 20V TRANSFER CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT (A)
COLLECTOR CURRENT (A)
800
600
400
200
200 Tj = 25C Tj = 125C
0
0
1
2
3
4
5
6
0
0
2
4
6
8
10
12
COLLECTOR-EMITTER VOLTAGE (V)
GATE-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 1200 VGE = 15V 1000 1000 1200
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT (A)
800
EMITTER CURRENT (A)
800
600
600
400
400
200 Tj = 25C Tj = 125C 0 0 1 2 3 4 5 6
200 Tj = 25C Tj = 125C 0 0 1 2 3 4 5 6 7 8
COLLECTOR-EMITTER SATURATION VOLTAGE (V)
EMITTER-COLLECTOR VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
May 2009 4
MITSUBISHI HVIGBT MODULES
CM600HG-90H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
CAPACITANCE CHARACTERISTICS (TYPICAL) 103
7 5 3 2
GATE CHARGE CHARACTERISTICS (TYPICAL) 20 VCE = 2250V, IC = 600A Tj = 25C 15
GATE-EMITTER VOLTAGE (V)
102
CAPACITANCE (nF)
7 5 3 2
Cies
10
5
101
7 5 3 2
0
Coes Cres VGE = 0V, Tj = 25C f = 100kHz
23 5 7 100 23 5 7 101 23 5 7 102
100
7 5 3 2
-5
-10
10-1 -1 10
-15
0
5
10
15
COLLECTOR-EMITTER VOLTAGE (V)
GATE CHARGE (C)
HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 8 VCC = 2250V, VGE = 15V RG = 15, Tj = 125C Inductive load 8
SWITCHING ENERGIES (J/P)
HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 10 VCC = 2250V, IC = 600A VGE = 15V, Tj = 125C Inductive load
SWITCHING ENERGIES (J/P)
6
Eon
Eon 6
4 Eoff 2
4 Eoff 2
Erec 0 0 500 1000 1500 0 0 10 20 30 40
Erec 50 60
COLLECTOR CURRENT (A)
GATE RESISTOR ()
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
May 2009 5
MITSUBISHI HVIGBT MODULES
CM600HG-90H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 102
7 5 3 2
FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102
7 5
REVERSE RECOVERY TIME (s)
3 2
3 2
101
7 5 3 2
101
7 5 3 2
lrr
103
7 5 3 2
tf
td(off) td(on)
100
7 5 3 2
100
7 5 3
trr
102
7 5 3 2
tr
2 3 4 5 7 102 2 3 4 5 7 103 2 3 4 5 7 104
2
10-1 1 10
10-1 1 10
2 3 4 5 7 102
2 3 4 5 7 103
2 3 4 5 7 104
101
COLLECTOR CURRENT (A)
EMITTER CURRENT (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
NORMALIZED TRANSIENT THERMAL IMPEDANCE
1.2 Rth(j-c)Q = 16.5K/kW Rth(j-c)R = 33.0K/kW 1.0
n
0.8
Z th( j -c ) ( t ) =
Ri [K/kW]
Ri 1-exp i=1
1 0.0059 0.0002 2 0.0978 0.0074
-
t
ti
0.6
i [sec]
3 0.6571 0.0732
4 0.2392 0.4488
0.4
0.2
0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
May 2009 6
REVERSE RECOVERY CURRENT (A)
VCC = 2250V, VGE = 15V RG = 15, Tj = 125C Inductive load
VCC = 2250V, VGE = 15V RG = 15, Tj = 125C Inductive load
104
7 5
SWITCHING TIMES (s)

MITSUBISHI HVIGBT MODULES
CM600HG-90H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
REVERSE BIAS SAFE OPERATING AREA (RBSOA) 1500 8000 VCC 3200V, VGE = 15V Tj = 125C, RG 15
SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) VCC 3200V, VGE = 15V Tj = 125C, RG 15
COLLECTOR CURRENT (A)
1000
COLLECTOR CURRENT (A)
6000
4000
500
2000
0
1000
2000
3000
4000
5000
0
0
1000
2000
3000
4000
5000
COLLECTOR-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER VOLTAGE (V)
FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 1500 VCC 3200V, di/dt 2200A/s Tj = 125C
REVERSE RECOVERY CURRENT (A)
1000
500
0
0
1000
2000
3000
4000
5000
COLLECTOR-EMITTER VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
May 2009 7

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